• DocumentCode
    3046045
  • Title

    Avalanche breakdown characteristics of AlGaAs/GaAs p-n heterojunctions for pulsed power applications

  • Author

    Hur, J.H. ; Myles, C. ; Gundersen, M.

  • Author_Institution
    Dept. of Elect. Eng.-Electrophys., Univ. of Southern California, Los Angeles, CA, USA
  • fYear
    1990
  • fDate
    26-28 Jun 1990
  • Firstpage
    421
  • Lastpage
    426
  • Abstract
    Results of a theoretical analysis of avalanche breakdown in AlxGa1-xAs/GaAs heterojunctions are presented. All x values of AlxGa1-xAs in the heterojunctions were considered. The avalanche breakdown voltage was found to be maximum when the x of Alx Ga1-x As in heterojunctions was ~0.45. The maximum heterojunction breakdown voltage was ~400 V larger than that of a homojunction when donor and acceptor concentrations were 1014 cm-3. The results indicate that the use of a thyristor for pulsed power applications can improve the blocking capability of the device
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; impact ionisation; p-n heterojunctions; pulsed power technology; AlxGa1-xAs-GaAs heterojunctions; acceptor concentrations; avalanche breakdown voltage; blocking capability; donor concentrations; pulsed power applications; semiconductor; thyristor; Avalanche breakdown; Breakdown voltage; Electric breakdown; Gallium arsenide; Heterojunctions; Impact ionization; Physics; Power engineering and energy; Semiconductor process modeling; Thyristors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Modulator Symposium, 1990., IEEE Conference Record of the 1990 Nineteenth
  • Conference_Location
    San Diego, CA
  • Type

    conf

  • DOI
    10.1109/MODSYM.1990.201002
  • Filename
    201002
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3046045