Title :
The role of field enhanced emission from deep level defects in GaAs in optical switches
Author :
Braun, C. ; Burke, T. ; White, W. ; Dease, C.
Author_Institution :
US LABCOM, Fort Monmouth, NJ, USA
Abstract :
The authors discuss in detail the current progress of their work in building an appropriate computer model for a bulk GaAs optical switch. The literature of electric-field-dependent physical mechanisms involving deep level defects including the Poole-Frenkel effect, phonon-assisted tunneling, and field enhanced recombination is reviewed in detail. In order to examine the role of these effects, a one-dimensional, self-consistent, finite difference, time explicit modeling code from LLNL is used. The role of the enhancement of the electron emission rate due to an applied electric field at a deep level defect is examined. Enhancement rates for the Poole-Frenkel effect and the phonon-assisted tunneling effect are identified
Keywords :
III-V semiconductors; Poole-Frenkel effect; deep levels; defect electron energy states; electron-hole recombination; electronic engineering computing; gallium arsenide; optical switches; photoconducting devices; semiconductor device models; semiconductor switches; tunnelling; LLNL; Lawrence Livermore National Laboratory; Poole-Frenkel effect; bulk GaAs optical switch; computer model; deep level defects; electric-field-dependent physical mechanisms; field enhanced emission; field enhanced recombination; phonon-assisted tunneling; semiconductor; time explicit modeling code; Electron optics; Electron traps; Gallium arsenide; Integrated circuit technology; Laboratories; Optical pulse generation; Optical switches; Photoconductivity; Production; Tunneling;
Conference_Titel :
Power Modulator Symposium, 1990., IEEE Conference Record of the 1990 Nineteenth
Conference_Location :
San Diego, CA
DOI :
10.1109/MODSYM.1990.201006
