Title :
A 6-GHz dual-modulus prescaler using 180nm SiGe technology
Author :
Nan, C.Z. ; Yu, X.P. ; Hu, B.Y. ; Lu, Z.H. ; Lim, W.M. ; Liu, Y. ; Yeo, K.S. ; Hu, ChangHui
Author_Institution :
Inst. of VLSI Design, Zhejiang Univ., Hangzhou, China
Abstract :
A 6-GHz divide-by-3/4 prescaler for fractional-N frequency synthesizers is presented in this paper. Optimization in the power consumption is carried out to ensure a high efficiency. Meanwhile, the critical cells, current-mode-logic (CML) building blocks, are optimized for high frequency and low power consumption. A prototype has been implemented in 180nm SiGe BiCMOS technology offered by Tower Jazz. The silicon area for the divide-by-3/4 prescaler is only 40 μ m × 50 μ m. The maximum operating frequency can reach 6-GHz, with 7.92mW power consumption in 1.8V voltage supply.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; current-mode logic; frequency synthesizers; prescalers; semiconductor materials; BiCMOS technology; SiGe; current-mode-logic building blocks; divide-by-3/4 prescaler; dual-modulus prescaler; fractional-N frequency synthesizers; frequency 6 GHz; low power consumption; power 7.92 mW; size 180 nm; voltage 1.8 V; BiCMOS integrated circuits; Frequency conversion; Frequency synthesizers; Power demand; Silicon germanium; Topology; Transistors; SiGe BiCMOS; dual-modulus prescaler; power and speed optimization;
Conference_Titel :
Integrated Circuits (ISIC), 2011 13th International Symposium on
Conference_Location :
Singapore
Print_ISBN :
978-1-61284-863-1
DOI :
10.1109/ISICir.2011.6131990
