Title :
Self-demodulated receiver at MM-wave range using SiGe technology
Author :
Yu, X.P. ; Hu, B.Y. ; Yan, X.L. ; Lu, Z.H. ; Lim, W.M. ; Liu, Y. ; Yeo, K.S. ; Hu, C.H.
Author_Institution :
Inst. of VLSI Design, Zhejiang Univ., Hangzhou, China
Abstract :
In this paper, a new self-demodulated receiver at MM-wave range is proposed. In difference with the conventional local oscillator down-conversion, the OOK modulated data is recovered by mixing two paths of amplified RF signals. Thanks to the simplified architecture, the system is able to work at a significantly wider range with a lower power consumption and faster settling time. Implemented in TowerJazz 180nm SiGe technology, the proposed receiver is able to work from 50GHz-70GHz with a data rate higher than 1Gbps while consuming a current less than 15mA from a standard 1.8V supply voltage.
Keywords :
Ge-Si alloys; amplitude shift keying; millimetre wave oscillators; radio receivers; OOK modulated data; SiGe; TowerJazz technology; amplified RF signals; frequency 50 GHz to 70 GHz; local oscillator down-conversion; power consumption; self-demodulated receiver; size 180 nm; voltage 1.8 V; CMOS integrated circuits; CMOS technology; Gain; Mixers; Power demand; Receivers; Silicon germanium; Low power; MMIC; Self-demudulated; SiGe; receiver;
Conference_Titel :
Integrated Circuits (ISIC), 2011 13th International Symposium on
Conference_Location :
Singapore
Print_ISBN :
978-1-61284-863-1
DOI :
10.1109/ISICir.2011.6131991
