A Stress-Tolerant Temperature-Stable RF MEMS Switched Capacitor

Author

Reines, I. ; Pillans, B. ; Rebeiz, G.M.

Author_Institution

Univ. of California San Diego, La Jolla, CA

fYear

2009

fDate

25-29 Jan. 2009

Firstpage

880

Lastpage

883

Abstract

We present the design, fabrication, and measurement of an RF MEMS (radio frequency micro-electromechanical system) switched capacitor that exhibits reduced sensitivity to residual stress and temperature. The device is based on a circularly symmetric geometry with arc-type springs placed between the anchors and suspended beam. This design compensates for the effects of the residual biaxial stress in the beam, resulting in a pull-in voltage slope versus temperature of only -50 mV/degC from -5degC to 95degC. Reducing the device sensitivity to residual stress improves the performance uniformity on a wafer-scale, and from wafer-to-wafer lots.

Keywords

capacitors; internal stresses; microswitches; device sensitivity; pull-in voltage slope; residual stress; stress-tolerant temperature-stable RF MEMS switched capacitor; switched capacitor; temperature -5 degC to 95 degC; wafer-to-wafer lots; Capacitors; Fabrication; Frequency measurement; Geometry; Radiofrequency microelectromechanical systems; Residual stresses; Springs; Stress measurement; Temperature sensors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems, 2009. MEMS 2009. IEEE 22nd International Conference on

Conference_Location

Sorrento

ISSN

1084-6999

Print_ISBN

978-1-4244-2977-6

Electronic_ISBN

1084-6999

Type

conf

DOI

10.1109/MEMSYS.2009.4805524

Filename

4805524