DocumentCode
3046333
Title
A Flipped Voltage Follower based low-dropout regulator with composite power transistor
Author
Chong, S.S. ; Chan, P.K.
Author_Institution
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
fYear
2011
fDate
12-14 Dec. 2011
Firstpage
472
Lastpage
475
Abstract
This paper presents an improved design for the low-dropout regulator (LDO) based on the Flipped Voltage Follower (FVF) structure. A FVF based LDO regulator with composite power transistor (CPT) is proposed. It reduces the minimum biasing current requirement of the power transistor in Single-Transistor-Control (STC) LDO regulator whilst enhancing the loop gain as well as bandwidth performance. The proposed LDO regulator has been validated using GLOBALFOUNDRIES 0.18-μm CMOS process. Using the FVF STC structure as the benchmark, the simulation results have shown that the proposed CPT LDO regulator has a better load transient and accuracy than that of the STC and Buffered Flipped Voltage Follower (BFVF) counterpart whilst maintaining low voltage operation.
Keywords
CMOS analogue integrated circuits; low-power electronics; operational amplifiers; power transistors; BFVF; CMOS process; CPT; FVF based LDO regulator; STC LDO regulator; buffered flipped voltage follower; composite power transistor; load transient; low-dropout regulator; minimum biasing current; single-transistor-control LDO regulator; size 0.18 mum; Bandwidth; Logic gates; Power transistors; Regulators; Transient analysis; Transistors; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Circuits (ISIC), 2011 13th International Symposium on
Conference_Location
Singapore
Print_ISBN
978-1-61284-863-1
Type
conf
DOI
10.1109/ISICir.2011.6131999
Filename
6131999
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