DocumentCode :
3046453
Title :
An improved dynamic-biased CMOS operational amplifier for biomedical circuit applications
Author :
Tan, H.L. ; Ong, G.T. ; Chan, P.K.
Author_Institution :
Sch. of EEE, Nanyang Technol. Univ., Singapore, Singapore
fYear :
2011
fDate :
12-14 Dec. 2011
Firstpage :
496
Lastpage :
499
Abstract :
An improved dynamic-biased CMOS operational amplifier for biomedical circuits is presented in this paper. The proposed ultra-low power operational amplifier comprises a weak-inversion biased differential input stage, a pseudo class-AB output stage and a multi-phase master bias dynamic biasing circuit. Using GLOBALFOUNDRIES 0.18 μm CMOS process, the proposed amplifier, without dyamic biasing circuit, consumes a static supply current of 5.94 μA at a 1.8V supply. The simulated result shows a DC gain of 89.63dB and an unity gain bandwidth of 2.55 MHz at a capacitive load of 30.5 pF. When activating the proposed dynamic biasing circuit to the same amplifier in a reported sample-and-hold (S/H) circuit for biomedical application, the S/H circuit consumes 8.16 μW at a sampling frequency of 128 kHz. In response to 1-Vpp and 1-kHz sinusoidal input, the S/H circuit has achieved -76.67 dB of total harmonic distortion (equivalent to 12.73 bits of linearity-based ENOB) and 5.21×10-3 μA/MHz of Figure of Merit.
Keywords :
CMOS integrated circuits; biomedical electronics; differential amplifiers; operational amplifiers; power amplifiers; DC gain; GLOBALFOUNDRIES CMOS process; S-H circuit; biomedical circuit application; capacitive load; current 5.94 muA; figure of merit; harmonic distortion; improved dynamic-biased CMOS operational amplifier; multiphase master bias dynamic biasing circuit; pseudoclass-AB output stage; sample-and-hold circuit; size 0.18 mum; static supply current; ultra-low power operational amplifier; unity gain bandwidth; voltage 1.8 V; weak-inversion biased differential input stage; CMOS integrated circuits; Capacitors; Low power electronics; Measurement; Operational amplifiers; Power demand; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Circuits (ISIC), 2011 13th International Symposium on
Conference_Location :
Singapore
Print_ISBN :
978-1-61284-863-1
Type :
conf
DOI :
10.1109/ISICir.2011.6132005
Filename :
6132005
Link To Document :
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