Charge collection probability: Normal-collector configuration

The charge collection probability is the basis in the study of induced current generated when the semiconductor sample is subjected to some external excitation. In this paper, we present an analytical expression for the charge collection probability of the normal-collector configuration, with finite dimensions and surface recombination at the free surfaces. An excellent agreement has been found between the charge collection probability profiles computed using the newly derived analytical expression and those obtained using a device simulator. The analytical expression was then used to study the effects of the various physical parameters on the charge collection probability. This new analytical expression is expected to enhance our understanding of the charge collection process.