Noise and intermodulation mechanisms in CMOS downconverters

Author

Li, Songting ; Li, Jiancheng ; Gu, Xiaochen ; Zhuang, Zhaowen ; Wang, Hongyi

Author_Institution

Sch. of Electron. Sci. & Eng., Nat. Univ. of Defense Technol., Changsha, China

Volume

2

fYear

2012

fDate

18-20 May 2012

Firstpage

841

Lastpage

852

Abstract

A noise and intermodulation distortion (IMD) analysis of CMOS downconverters, such as the widely used CMOS Gilbert cell, is presented. A qualitative physical model has been developed to explain the mechanisms responsible for noise and IMD in mixers. The contribution of all internal noise source and IMD to the output current is calculated through simple equations. The accuracy of the predictions about theory results are validated via comparing with simulation results, and the dependence of mixer noise and IMD on local oscillator (LO) amplitude and other circuit parameters are.

Keywords

CMOS integrated circuits; circuit noise; mixers (circuits); CMOS Gilbert cell; CMOS mechanisms; intermodulation distortion analysis; internal noise source; local oscillator amplitude; mixer noise; mixers; qualitative physical model; Logic gates; Mixers; Active Mixers; IIP2; IIP3; Second-order distortion; Third-order distortion; direct-conversion; flicker noise; low IF; receivers; self-mixing; white noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Measurement, Information and Control (MIC), 2012 International Conference on

Conference_Location

Harbin

Print_ISBN

978-1-4577-1601-0

Type

conf

DOI

10.1109/MIC.2012.6273420

Filename

6273420