DocumentCode :
3046615
Title :
Optimization of vertical silicon nanowire based solar cell using 3D TCAD simulation
Author :
Kumar, Jitendra ; Manhas, S.K. ; Singh, Dharmendra ; Vaddi, Ramesh
Author_Institution :
Centre of Nanotechnol., Indian Inst. of Technol. Roorkee, Roorkee, India
fYear :
2011
fDate :
12-14 Dec. 2011
Firstpage :
528
Lastpage :
531
Abstract :
Solar cells based on nanowire (NW) array has shown promising potential for the low cost photovoltaic because of light absorption and charge carrier transport in this structure are in orthogonal direction to each other. In this study, we report the effect of variation of doping and defect densities on vertical NW solar cell bench-marked with standard planar structure using 3D-TCAD simulation. The performance of NW and planar structure for different amount of defect densities in the structures is investigated. We show that performance of NW solar cell continuously increases with wire doping. The results show that for increased efficiency, a high p-core and n-shell doping densities (~1019 cm-3) are needed. This is attributed to radial structure of NW and increased field assisted charge separation. It is found that for same amount of illuminated area, NW structure has ~25% higher conversion efficiency. Further it is found that NW radial structure can tolerate defect density as high as 1018 cm-3, with 82% higher conversion efficiency than planar structure. Our results have significant importance for design of vertical NW based solar cells and applications.
Keywords :
electronic engineering computing; elemental semiconductors; nanowires; optimisation; silicon; solar cells; technology CAD (electronics); 3D TCAD simulation; NW array; Si; high p-core; light absorption; n-shell doping densities; orthogonal direction; photovoltaic; solar cell; standard planar structure; vertical silicon nanowire; wire doping; Doping; Electric fields; Junctions; Photovoltaic cells; Semiconductor process modeling; Silicon; Built-in field; Cell efficiency; Defect density; Nanowire Solar cell;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Circuits (ISIC), 2011 13th International Symposium on
Conference_Location :
Singapore
Print_ISBN :
978-1-61284-863-1
Type :
conf
DOI :
10.1109/ISICir.2011.6132013
Filename :
6132013
Link To Document :
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