Amorphous carbon step coverage improvement applied to advanced hard mask for lithographic application

Author

Lin, Zitu-Tin ; Chen, Chun-Chi ; Chien, Hung-Ju ; Matsuo, Hiroshi

Author_Institution

Module Technol. Div., Powerchip Technol. Corp., Hsinchu, Taiwan

fYear

2011

fDate

12-14 Dec. 2011

Firstpage

532

Lastpage

534

Abstract

Poor deposited step coverage (S/C) of carbon hard mask (HM) at alignment and overlay masks can cause worse overlay signal and further rework performance. A much better step coverage film can be obtained using C₂H₂ as precursor owing to superior sticking coefficient (higher C/H ratio). This C₂H₂ base amorphous (a-C) film property and etch selectivity are also compatible with other precursors at the same time. As to the rework ability, it improved a lot and the pattern is still clear even after five times of rework.

Keywords

amorphous state; carbon compounds; chemical vapour deposition; etching; lithography; masks; thin films; C₂H₂; advanced hard mask; amorphous carbon; carbon hard mask; etch selectivity; lithographic application; overlay signal; step coverage film; step coverage improvement; sticking coefficient; Carbon; Etching; Films; Plasmas; Radio frequency; Scanning electron microscopy; Silicon; a-C; etch selectivity; rework; step coverage;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Circuits (ISIC), 2011 13th International Symposium on

Conference_Location

Singapore

Print_ISBN

978-1-61284-863-1

Type

conf

DOI

10.1109/ISICir.2011.6132014

Filename

6132014