• DocumentCode
    3046716
  • Title

    A curvature compensated bandgap reference with low drift and low noise

  • Author

    Jiang, Junmin ; Ning, Zhihua ; HE, Lenian

  • Author_Institution
    Inst. of Very Large Integrated Circuits, Zhejiang Univ., Hangzhou, China
  • fYear
    2011
  • fDate
    12-14 Dec. 2011
  • Firstpage
    547
  • Lastpage
    550
  • Abstract
    A low temperature drift and low noise curvature-compensated CMOS bandgap reference is proposed. A dual-differential input pair amplifier was employed to add compensation with a high-order term of T ln T to the traditional 1st-order compensated bandgap. To reduce the offset of amplifier and output noise of bandgap reference, input differential pairs are large-sized PMOS. With a low dropout regulator stage, the voltage reference was increased to 3V. The voltage reference´s temperature curvature is further corrected by 8-bit resistor trimming network. To avoid degrading the precision, noise performance is properly taken into account. The chip was fabricated by using TSMC´s 0.35μm CMOS process. The temperature coefficient was measured only to be 2.1 ppm/°C over -40~125 °C after trimming. The output noise is 42 μVrms from 0.1Hz to 10Hz.
  • Keywords
    CMOS integrated circuits; amplifiers; reference circuits; CMOS bandgap reference; curvature compensated bandgap reference; dual-differential input pair amplifier; frequency 0.1 Hz to 10 Hz; input differential pairs; low dropout regulator stage; low temperature drift; resistor trimming network; size 0.35 mum; temperature -40 degC to 125 degC; temperature coefficient; voltage 3 V; voltage reference; CMOS integrated circuits; Noise; Performance evaluation; Photonic band gap; Resistors; Semiconductor device measurement; Temperature measurement; Bandgap; Curvature-compensation; Dual-differential input pair amplifier; Low drift; Low noise; Voltage Reference;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Circuits (ISIC), 2011 13th International Symposium on
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-61284-863-1
  • Type

    conf

  • DOI
    10.1109/ISICir.2011.6132018
  • Filename
    6132018