An influence of oblique-angle sputtering on ZnO:Ga thin film properties

Author

Flickyngerova, S. ; Netrvalova, M. ; Sutta, P. ; Novotny, I. ; Tvaroxek, V.

Author_Institution

Inst. of Electron. & Photonics FEI, Slovak Univ. of Technol., Bratislava, Slovakia

fYear

2012

fDate

11-15 Nov. 2012

Firstpage

275

Lastpage

278

Abstract

The oblique-angle sputtering of ZnO thin films doped by Ga (ZnO:Ga) with oblique-angle of 80° to the horizontal (target) plane was performed. It improved significantly their preferred crystalline (002) texture and columnar crystalline structure tilted of about 14° declination from the substrate normal, decreased their electrical resistivity down to value of 4.4 × 10^-3 Ωcm and increased optical transparency up to 88 %. in comparison with films deposited perpendicularly to substrate.

Keywords

II-VI semiconductors; crystal structure; electrical resistivity; gallium; semiconductor growth; semiconductor thin films; sputter deposition; wide band gap semiconductors; zinc compounds; columnar crystalline structure; electrical resistivity; horizontal plane; oblique-angle sputtering; optical transparency; preferred crystalline (002) texture; thin film properties; Optical diffraction; Optical films; Optical sensors; Optical surface waves; Sputtering; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices & Microsystems (ASDAM), 2012 Ninth International Conference on

Conference_Location

Smolenice

Print_ISBN

978-1-4673-1197-7

Type

conf

DOI

10.1109/ASDAM.2012.6418515

Filename

6418515