Title :
Electrical characterization of GaSb buried p-n junctions
Author :
Baldini, M. ; Gombia, E. ; Parisini, A. ; Tarricone, Luciano ; Ghezzi, Carlo ; Frigeri, C. ; Gasparotto, A.
Author_Institution :
IMEM, Parma, Italy
Abstract :
Buried GaSb junctions were realized through Zn diffusion in Te-doped GaSb bulk crystals, the p-dopant being supplied through the epitaxial deposition of a heavily Zn-doped GaAs layer on GaSb. Structural and electrical investigations confirm the build-up of buried junctions, induced by Zn diffusion within GaSb, with satisfying rectifying properties. Surprisingly, the p-n junctions are formed more deeply with respect to the Zn diffusion front. A local rising up of the native acceptor density is assumed to drive the p-type conductivity conversion of the GaSb substrate beyond the Zn penetration depth.
Keywords :
III-V semiconductors; MOCVD; diffusion; electrical conductivity; gallium arsenide; gallium compounds; p-n heterojunctions; rectification; semiconductor growth; vapour phase epitaxial growth; zinc; GaSb-GaAs:Zn; GaSb:Te; bulk crystals; buried p-n junctions; diffusion front; electrical characterization; epitaxial deposition; local rising up; native acceptor density; p-dopant; p-type conductivity conversion; penetration depth; structural investigations; Capacitance-voltage characteristics; Doping; Gallium arsenide; P-n junctions; Substrates; Temperature measurement; Zinc;
Conference_Titel :
Advanced Semiconductor Devices & Microsystems (ASDAM), 2012 Ninth International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4673-1197-7
DOI :
10.1109/ASDAM.2012.6418523
