Title :
Strain accommodation within porous buffer layers in heteroepitaxial growth
Author :
Grym, J. ; Nohavica, D. ; Gladkov, P. ; Vanis, J. ; Hulicius, E. ; Pangrac, J. ; Pacherova, O. ; Piksova, K.
Author_Institution :
Inst. of Photonics & Electron., Prague, Czech Republic
Abstract :
We report on the electrochemical preparation of GaAs porous substrates, their heat treatment in As rich environment and their overgrowth by metalorganic vapor phase epitaxy (MOVPE). The goal is to demonstrate that porous substrates are capable of accommodating strain at the interface with highly lattice mismatched In(x)Ga(1-x)As layers.
Keywords :
III-V semiconductors; MOCVD; buffer layers; electrochemical analysis; gallium arsenide; heat treatment; indium compounds; porous materials; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; GaAs; GaAs-InGaAs; MOVPE; electrochemical preparation; heat treatment; heteroepitaxial growth; lattice mismatched layers; metalorganic vapor phase epitaxy; porous buffer layers; porous substrates; strain accommodation; Epitaxial growth; Epitaxial layers; Gallium arsenide; Scanning electron microscopy; Substrates; Surface morphology; Surface treatment;
Conference_Titel :
Advanced Semiconductor Devices & Microsystems (ASDAM), 2012 Ninth International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4673-1197-7
DOI :
10.1109/ASDAM.2012.6418524
