Experimental set-up for on-chip characterization of electronic devices by Time Domain Reflectometry

The paper describes the principle of the Time Domain Reflectometry (TDR) method for on-chip measurement and characterization of transient and frequency characteristics of electronic devices, required instrumentation and developed measurement setup for TDR measurements with time resolution up to 15ps. Due to parasitic effects caused by packaging of electronic devices and interconnections, measurement is realized as on-chip using microscopic probe station. Functionality of the realized measurement setup is demonstrated by measurement of input and output impedances of aluminium gallium nitride / gallium nitride (AlGaN/GaN) high electron mobility transistor (HEMT).