Title :
Development of Skewed Drie Process and its Application to Electrostatic Tilt Mirror
Author :
Nakada, M. ; Takahashi, K. ; Takahashi, T. ; Higo, A. ; Fujita, H. ; Toshiyoshi, H.
Author_Institution :
Inst. of Ind. Sci., Univ. of Tokyo, Tokyo
Abstract :
We present a newly developed skewed-DRIE (deep reactive ion etch) process through a silicon wafer. Maximum skew angle of 25 degrees with respect to the wafer surface was obtained with a 360 micron thick silicon substrate. This technique was used to build the slanted counter electrode of 60 degrees for an electrostatic torsion mirror. Pull-in voltage was 100 volts, which was lower than that of a vertically etched counter electrode.
Keywords :
mirrors; silicon; sputter etching; Si; deep reactive ion etch; electrostatic tilt mirror; electrostatic torsion mirror; pull-in voltage; silicon wafer; skewed DRIE process; thick silicon substrate; vertically etched counter electrode; Counting circuits; Electrodes; Electrostatics; Etching; Micromachining; Mirrors; Plasma applications; Silicon on insulator technology; Voltage; Wafer bonding;
Conference_Titel :
Micro Electro Mechanical Systems, 2009. MEMS 2009. IEEE 22nd International Conference on
Conference_Location :
Sorrento
Print_ISBN :
978-1-4244-2977-6
Electronic_ISBN :
1084-6999
DOI :
10.1109/MEMSYS.2009.4805576
