Development of diffusion barriers for Ti/Al based ohmic contact to AlGaN/GaN heterostructures

Author

Macherzynski, W. ; Paszkiewicz, B.

Author_Institution

Fac. of Microsyst. Electron. & Photonics, Wroclaw Univ. of Technol., Wroclaw, Poland

fYear

2012

fDate

11-15 Nov. 2012

Firstpage

203

Lastpage

206

Abstract

We tested various ohmic contact metallizations schemes on AlGaN/GaN heterostructures to achieve good surface topography and proper line edge definition. Ti, Ru, Pt and Mo barrier layers replaced the intermediate Ni layer in Ti/Al/Ni/Au multilayer metallization. We observed significant difference in proposed schemes topography and line edge definition. The Ti/Al/Mo/Au contact had not only good surface morphology but also proper line edge definition.

Keywords

III-V semiconductors; aluminium; aluminium compounds; diffusion barriers; gallium compounds; metallisation; multilayers; ohmic contacts; surface topography; titanium; wide band gap semiconductors; AlGaN-GaN heterostructures; Mo barrier layers; Pt barrier layers; Ru barrier layers; Ti barrier layers; Ti-Al based ohmic contact; Ti-Al-Mo-Au; Ti-Al-Mo-Au contact; Ti-Al-Ni-Au; Ti-Al-Ni-Au multilayer metallization; diffusion barriers; intermediate Ni layer; line edge definition; ohmic contact metallization; surface topography; Gold; Metallization; Nickel; Nonhomogeneous media; Ohmic contacts; Surface morphology;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices & Microsystems (ASDAM), 2012 Ninth International Conference on

Conference_Location

Smolenice

Print_ISBN

978-1-4673-1197-7

Type

conf

DOI

10.1109/ASDAM.2012.6418532

Filename

6418532