Title :
Silicon VLSI Device Technology and Nanoelectronics
Author :
Hiramoto, Toshiro
Author_Institution :
Tokyo Univ., Tokyo
Abstract :
The present status of silicon VLSI device technology and future trend of silicon nanoelectronics are discussed. The CMOS extension will continue to be the main technology and new other technologies will be merged into CMOS. The main technical approaches to the challenges above are, respectively, (a) improve the carrier transport properties by introducing new materials, (b) improve the electrostatics of MOSFETs by introducing new transistor structures, and (c) suppress the interchip and intrachip variations. There are numerous developments and research work on further CMOS scaling.
Keywords :
CMOS integrated circuits; MOSFET; VLSI; elemental semiconductors; nanoelectronics; silicon; CMOS; MOSFET; carrier transport properties; electrostatics; nanoelectronics; silicon VLSI device technology; CMOS memory circuits; CMOS process; CMOS technology; Information processing; MOSFET circuits; Nanoelectronics; Nanoscale devices; Silicon; Very large scale integration; Voltage control;
Conference_Titel :
Microprocesses and Nanotechnology, 2007 Digest of papers
Conference_Location :
Kyoto
Print_ISBN :
978-4-9902472-4-9
DOI :
10.1109/IMNC.2007.4456077