Title :
Sputtered NiO thin films for organic vapours testing
Author :
Predanocy, M. ; Hotovy, I. ; Caplovicova, M. ; Rehacek, V. ; Kosc, I. ; Spiess, L.
Author_Institution :
Inst. of Electron. & Photonics, Slovak Univ. of Technol., Bratislava, Slovakia
Abstract :
NiO thin films were prepared by dc reactive magnetron sputtering with thicknesses of about 50 and 100 nm on alumina and KCl substrates. The deposited films were annealed in a furnace at 500°C in nitrogen atmosphere for 2 hours. From XRD and TEM investigations were found that annealed NiO thin films have a polycrystalline structure with the size of grains below 25 nm. The electrical responses of NiO sensor structures towards different ethanol, acetone and toluene concentrations have been measured. It was found that the thickness of NiO films is an important parameter in determining the sensitivity of prepared gas sensors.
Keywords :
X-ray diffraction; annealing; grain size; nickel compounds; semiconductor thin films; sputter deposition; transmission electron microscopy; Al2O3; KCl; KCl substrates; NiO sensor structures; TEM; X-ray diffraction; XRD; alumina substrates; annealing; dc reactive magnetron sputtering; electrical responses; grain size; igations; nitrogen atmosphere; organic vapour testing; polycrystalline structure; size 50 nm to 100 nm; solvent concentrations; sputtered NiO thin films; temperature 500 degC; time 2 h; Annealing; Ethanol; Films; Gas detectors; Resistance; Sensitivity; Time factors;
Conference_Titel :
Advanced Semiconductor Devices & Microsystems (ASDAM), 2012 Ninth International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4673-1197-7
DOI :
10.1109/ASDAM.2012.6418540