DocumentCode :
3047371
Title :
Reaction mechanism of EUV resists
Author :
Toriumi, Minoru ; Kaneyama, Koji ; Itani, Toshiro
Author_Institution :
Semicond. Leading Edge Technol. Inc., Ibaraki
fYear :
2007
fDate :
5-8 Nov. 2007
Firstpage :
16
Lastpage :
17
Abstract :
In this paper, the deprotection kinetics in polyphenol-molecular resist and phenol-resin resist materials induced by the EUV exposure and the vacuum effect on the dissolution during the development was studied.
Keywords :
photoresists; polymers; reaction kinetics; ultraviolet lithography; EUV resists; deprotection kinetics; dissolution; phenol-resin resist material; polyphenol-molecular resist material; reaction mechanism; vacuum effect; Absorption; Equations; Kinetic theory; Laboratories; Lead compounds; Materials science and technology; Polymers; Protection; Resists; Semiconductor materials;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology, 2007 Digest of papers
Conference_Location :
Kyoto
Print_ISBN :
978-4-9902472-4-9
Type :
conf
DOI :
10.1109/IMNC.2007.4456082
Filename :
4456082
Link To Document :
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