Three-dimensional Nanomechanical Device Fabrication by FIB-CVD

Author

Matsui, Shinji

Author_Institution

Hyogo Univ., Hyogo

fYear

2007

fDate

5-8 Nov. 2007

Firstpage

18

Lastpage

19

Abstract

Three-dimensional nanostructure fabrication has been demonstrated by 30 keV Ga⁺ FIB-CVD using a phenanthrene (C₁₄H₁₀) source as a precursor. The characterization of deposited film on a silicon substrate was performed by a transmission microscope and Raman spectra. This result indicates that the deposition film is a diamondlike amorphous carbon (DLC) which have attractive attention because of their hardness, chemical inertness and optical transparency. A large Young´s modulus that exceeds 600 GPa seems to present great possibilities for various applications. These results demonstrate that FIB-CVD is one of key technologies to make 3D nanostructure devices in the field of electronics, mechanics, optics and biology.

Keywords

Raman spectra; Young´s modulus; chemical vapour deposition; diamond-like carbon; focused ion beam technology; hardness; nanoelectronics; nanostructured materials; nanotechnology; thin films; 3D nanomechanical device fabrication; C; DLC; FIB-CVD; Raman spectra; Si; Young´s modulus; biology; chemical inertness; diamondlike amorphous carbon; electronics; hardness; mechanics; nanostructured material fabrication; optical transparency; optics; phenanthrene; transmission microscopy; Amorphous materials; Biomedical optical imaging; Fabrication; Microscopy; Nanobioscience; Nanoscale devices; Optical films; Semiconductor films; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology, 2007 Digest of papers

Conference_Location

Kyoto

Print_ISBN

978-4-9902472-4-9

Type

conf

DOI

10.1109/IMNC.2007.4456083

Filename

4456083