Title :
Electrical characterisation of a-Si:H(n)/c-Si(p) heterostructures for solar cell applications
Author :
Mikolasek, M. ; Nemec, M. ; Kovac, J. ; Mannino, Giovanni ; Gerardi, C. ; Tringali, C. ; Harmatha, L. ; Lombardo, Salvatore
Author_Institution :
Slovak Univ. of Technol., Bratislava, Slovakia
Abstract :
The electrical characterization of a-Si:H(n)/c-Si(p) structures prepared by three different deposition techniques is provided by the analysis of the dark and light I-V and C-V-F measurements. Obtained is the insight on the interface quality and contacts in the structure. The analysis of C-V-F measurements was supported by AFORS-HET simulation. Results have revealed the presence of the Schottky barrier in the structure deteriorating performance of the solar cells.
Keywords :
Schottky barriers; Schottky diodes; silicon; solar cells; AFORS-HET simulation; C-V-F measurements; I-V measurement; Schottky barrier; Si:H-Si; a-Si:H(n)-c-Si(p) heterostructures; contacts; deposition techniques; electrical characterisation; interface quality; solar cell applications; Capacitance; Capacitance measurement; Frequency measurement; Lighting; Semiconductor device measurement; Temperature measurement; Voltage measurement;
Conference_Titel :
Advanced Semiconductor Devices & Microsystems (ASDAM), 2012 Ninth International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4673-1197-7
DOI :
10.1109/ASDAM.2012.6418543
