Title :
Devices with Te-doped InGaP layers
Author :
Kudela, R. ; Gregusova, D. ; Stoklas, R.
Author_Institution :
Inst. of Electr. Eng., Bratislava, Slovakia
Abstract :
Highly n-type doped and several nanometres thick layers are necessary for various device structures, especially HEMTs. We studied delta doping In1-XGaXP ternary with tellurium, the layers were grown by MOVPE. A low growth temperature of 560 °C was used to restrict the influence of diffusion, and diethyltellurium was used as the precursor. A maximum Hall sheet concentration of 2.75×1013 cm-2 was achieved. Very thin HEMT structures with high conductivity and HEMTs were prepared using the In1-XGaXP barriers doped with tellurium.
Keywords :
Hall effect; III-V semiconductors; MOCVD; diffusion; electrical conductivity; gallium compounds; high electron mobility transistors; indium compounds; semiconductor doping; tellurium; vapour phase epitaxial growth; HEMT; Hall sheet concentration; InGaP:Te; MOVPE; conductivity; delta doping; device structure; diethyltellurium; diffusion; growth temperature; n-type doping; temperature 560 degC; Conductivity; Crystals; Doping; Gallium arsenide; HEMTs; MODFETs; Tellurium;
Conference_Titel :
Advanced Semiconductor Devices & Microsystems (ASDAM), 2012 Ninth International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4673-1197-7
DOI :
10.1109/ASDAM.2012.6418544
