Title :
The influence of an AlOx film in-situ deposited on the GaAs-based HFETs properties
Author :
Gregusova, D. ; Kudela, R. ; Stoklas, R. ; Blaho, M. ; Gucmann, F. ; Fedor, J. ; Kordos, P.
Author_Institution :
Inst. of Electr. Eng., Bratislava, Slovakia
Abstract :
An in-situ deposited AlOx layer has a great influence on the transistor properties. We recently published a comparison between an AlGaAs/InGaAs/GaAs HFET (without any passivation) and a passivated MOSHFET (AlOx/AlGaAs/InGaAs/GaAs. This paper reports on properties of AlGaAs/GaAs transistors with an InGaAs channel passivated with an in-situ deposited AlOx layer. Also, the effectiveness of the passivation is discussed. The influence of an thin AlOx layer on properties of passivated HFET in comparison to the passivated MOSHFET and the unpassivated HFET was studied. The understanding of the functionality of the in-situ deposited layer in the passivation or modification of surface trapping states will contribute to the knowledge of GaAs surface potential control.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; passivation; surface potential; surface states; thin films; AlGaAs-GaAs transistor properties; AlGaAs-InGaAs-GaAs; AlGaAs-InGaAs-GaAs HFET; AlOx; GaAs surface potential control; GaAs-based HFET properties; InGaAs channel; deposited layer functionality; passivated HFET properties; passivated MOSHFET; passivation effectiveness; surface trapping state modification; thin layer; unpassivated HFET; Gallium arsenide; HEMTs; Indium gallium arsenide; Logic gates; MODFETs; Nitrogen; Oxidation;
Conference_Titel :
Advanced Semiconductor Devices & Microsystems (ASDAM), 2012 Ninth International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4673-1197-7
DOI :
10.1109/ASDAM.2012.6418545
