Title :
Deep levels in InGaAsN/GaAs and InGaAs/GaAs heterojunctions
Author :
Rybar, J. ; Stuchlikova, L. ; Petrus, M. ; Harmatha, L. ; Sciana, B. ; Radziewicz, D. ; Pucicki, D. ; Tlaczala, M.
Author_Institution :
Inst. of Electron. & Photonics, Slovak Univ. of Technol. in Bratislava, Bratislava, Slovakia
Abstract :
This paper highlights the deep level transient spectroscopy investigation of the triple quantum well InGaAsN/GaAs and InGaAs/GaAs heterostructures grown by atmospheric pressure metal organic vapour phase epitaxy (APMOVPE). The main differences of these typical triple quantum well structures are: nitrogen concentration in InyGa1-yAs/GaAs heterostructures, thickness of UD InyGa1-yAs1-xNx quantum wells, indium concentration and thickness of UD GaAs barrier. The three electron deep levels ET1 (0.472 eV), ET2 (0.974 eV) and ET3 (0.572 eV) were identified. The 0.36 % presence of nitrogen in structure NI51n inhibits defect ET1 and creates the trap ET2 with very high trap concentration.
Keywords :
III-V semiconductors; MOCVD; deep level transient spectroscopy; deep levels; gallium arsenide; indium compounds; semiconductor heterojunctions; semiconductor quantum wells; vapour phase epitaxial growth; wide band gap semiconductors; APMOVPE; InyGa1-yAs-GaAs heterostructures; InyGa1-yAs1-xNx quantum well thickness; InGaAs-GaAs; InGaAs-GaAs heterojunctions; InGaAsN-GaAs; InGaAsN-GaAs heterojunctions; UD GaAs barrier thickness; atmospheric pressure metal organic vapour phase epitaxy; deep level transient spectroscopy triple quantum well; deep levels; defect ET1; indium concentration; nitrogen concentration; structure NI51n; trap ET2; trap concentration; Electron traps; Gallium arsenide; Nitrogen; Photonic band gap; Temperature measurement; Transient analysis; Voltage measurement;
Conference_Titel :
Advanced Semiconductor Devices & Microsystems (ASDAM), 2012 Ninth International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4673-1197-7
DOI :
10.1109/ASDAM.2012.6418546
