Title :
Numerical simulation study of barrier inhomogeneities at Schoktty contacts
Author :
Chand, Satish ; Kaushal, P.
Author_Institution :
Dept. of Phys., Nat. Inst. of Technol., Hamirpur, India
Abstract :
The Poisson equation and the drift diffusion equations have been used to simulate the current-voltage characteristics of inhomogeneous Schottky contact having discrete distribution of different barrier height patches. The potential variation inside the bulk semiconductor near the metal-semiconductor contact was estimated first and then the current as a function of bias through the Schottky diode using silicon parameters were calculated for various discrete distribution patterns of barrier heights. From the simulated current-voltage characteristics the apparent diode parameters were extracted by fitting of current-voltage data into thermionic emission diffusion current equation. The derived barrier parameters are analyzed to study the effect of barrier inhomogeneities on the current-voltage characteristics of Schottky contact.
Keywords :
Poisson equation; Schottky barriers; Schottky diodes; diffusion; electrical contacts; numerical analysis; semiconductor device models; semiconductor-metal boundaries; thermionic emission; Poisson equation; Schottky diode; apparent diode parameters; barrier height patches; barrier inhomogeneity effect; barrier parameters; bulk semiconductor; current-voltage characteristics; current-voltage data; discrete distribution patterns; drift diffusion equations; inhomogeneous Schottky contact; metal-semiconductor contact; numerical simulation; potential variation; silicon parameters; thermionic emission diffusion current equation; Equations; Mathematical model; Nonhomogeneous media; Schottky barriers; Schottky diodes; Temperature;
Conference_Titel :
Advanced Semiconductor Devices & Microsystems (ASDAM), 2012 Ninth International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4673-1197-7
DOI :
10.1109/ASDAM.2012.6418548
