DocumentCode :
3047502
Title :
Detection elements for on-cantilever laboratory
Author :
Scepka, T. ; Gregusova, D. ; Gazi, S. ; Hascik, S. ; Fedor, J. ; Soltys, J. ; Kudela, R. ; Cambel, V.
Author_Institution :
Inst. of Electr. Eng., Bratislava, Slovakia
fYear :
2012
fDate :
11-15 Nov. 2012
Firstpage :
91
Lastpage :
94
Abstract :
Micrometer-scaled cantilever-based sensors can be utilized in electrostatic and magnetic measurements and also are perspective for future chemical and biological sensing applications. GaAs is the most used III-V material for cantilever probe development thanks to its optoelectronic properties, high mobility 2D electrons, high piezoresistivity and sufficient mechanical properties. Novel sensing probes, prepared by integration of various detection elements are perspective for specific requirements. This work is mainly focused on technology process of such micro-CLs and also on fabrication of detection elements (transistors) with the aim to integrate directly on the micro-CLs.
Keywords :
III-V semiconductors; biosensors; cantilevers; chemical sensors; electrostatics; gallium arsenide; magnetic variables measurement; microsensors; piezoresistance; 2D electron mobility; GaAs; biological sensing application; cantilever probe development; chemical sensing application; detection element; electrostatic measurement; magnetic measurement; mechanical property; microCL; micrometer scaled cantilever-based sensor; on-cantilever laboratory; optoelectronic property; piezoresistivity; sensing probe; Etching; FETs; Gallium arsenide; Logic gates; Sensors; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Devices & Microsystems (ASDAM), 2012 Ninth International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4673-1197-7
Type :
conf
DOI :
10.1109/ASDAM.2012.6418549
Filename :
6418549
Link To Document :
بازگشت