DocumentCode :
3047565
Title :
Cathodoluminescence characterization of InGaN/GaN QW pyramidal structure by Monte Carlo method
Author :
Priesol, J. ; Satka, Alexander
Author_Institution :
Inst. of Electron. & Photonics, Slovak Univ. of Technol., Bratislava, Slovakia
fYear :
2012
fDate :
11-15 Nov. 2012
Firstpage :
79
Lastpage :
82
Abstract :
The aim of this paper is to present the quantitative study of cathodoluminescence from InGaN/GaN single quantum wells grown on the GaN pyramid facets. Monte Carlo method has been used to investigate the generation, diffusion and recombination of minority carriers inside the structure under focused electron beam. The influence of various carrier diffusion lengths in top GaN layer and buffer GaN on the depth distributions of recombination and the contribution of individual layers to the cathodoluminescence in dependence on the thickness of the top GaN layer have been determined. The possibility to determine the position of the quantum well within the structure using cathodoluminescence analysis has been discussed.
Keywords :
III-V semiconductors; Monte Carlo methods; carrier lifetime; cathodoluminescence; gallium compounds; indium compounds; minority carriers; semiconductor quantum wells; wide band gap semiconductors; InGaN-GaN; Monte Carlo method; carrier diffusion lengths; cathodoluminescence; focused electron beam; minority carrier recombination; pyramidal structure; single quantum wells; Electron beams; Energy loss; Gallium nitride; Monte Carlo methods; Radiative recombination; Scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Devices & Microsystems (ASDAM), 2012 Ninth International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4673-1197-7
Type :
conf
DOI :
10.1109/ASDAM.2012.6418551
Filename :
6418551
Link To Document :
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