DocumentCode
3047617
Title
Dependence of EUV emission on xenon flow rate from a z-pinch discharge plasma
Author
Zhang, C.H. ; Katsuki, S. ; Kimura, A. ; Akiyama, H.
Author_Institution
Harbin Inst. of Technol., Harbin
fYear
2007
fDate
5-8 Nov. 2007
Firstpage
44
Lastpage
45
Abstract
This paper describes the dependence of EUV emission from a Z-pinch plasma discharge on gas flow rate. The Z-pinch plasma was driven by pulsed current with amplitude of 30 kA and pulse duration of 100 ns. Pinhole imaging, EUV spectrograph and in-band EUV energy monitor were used to characterize the EUV emission from the Z-pinch discharge plasma.
Keywords
Z pinch; plasma diagnostics; plasma flow; ultraviolet sources; xenon; EUV emission; EUV spectrograph; Xe; Z-pinch discharge plasma; current 30 kA; pinhole imaging; time 100 ns; xenon flow rate; Fault location; Filters; Fluid flow; Lithography; Monitoring; Plasma materials processing; Plasma sources; Plasma waves; Ultraviolet sources; Xenon;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology, 2007 Digest of papers
Conference_Location
Kyoto
Print_ISBN
978-4-9902472-4-9
Type
conf
DOI
10.1109/IMNC.2007.4456096
Filename
4456096
Link To Document