Damage Free Particle Removal from EUVL Mask Layers by High Energy Laser Shock Cleaning (LSC)

Author

Kim, Tae-Gon ; Young-Sam Yoo ; Son, Il-Ryong ; Kim, Tae-Geun ; Ahn, Jinho ; Lee, Jong-Myoung ; Choi, Jae-Sung ; Busnaina, Ahmed A. ; Park, Jin-Goo

Author_Institution

Hanyang Univ., Ansan

fYear

2007

fDate

5-8 Nov. 2007

Firstpage

48

Lastpage

49

Abstract

The paper deals about the method of small particle removal based on laser induced plasma (LIP) shock wave has been recently applied to clean wafers and masks in semiconductor processes. The silica particles of 50 nm removed from EUVL mask layers by high energy LSC without surface damage by controlling the gap distance. High temperature of plasma plume by the focused laser beam caused the surface damage. It is important not only to increase the laser energy to remove small particles, but also to control the gap distance to avoid the surface damage.

Keywords

alumina; laser materials processing; multilayers; plasma materials processing; plasma shock waves; ruthenium; surface cleaning; tantalum compounds; ultraviolet lithography; Al₂O₃-TaN-Ru-Si; EUVL; LIP; LSC; Si; focused laser beam; high energy laser shock cleaning; laser induced plasma shock; mask; semiconductor process; silica particles; surface damage; Electric shock; Laser beams; Particle beams; Plasma temperature; Plasma waves; Semiconductor lasers; Shock waves; Silicon compounds; Surface cleaning; Surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology, 2007 Digest of papers

Conference_Location

Kyoto

Print_ISBN

978-4-9902472-4-9

Type

conf

DOI

10.1109/IMNC.2007.4456098

Filename

4456098