Title :
Hot-spot detection and correction using full-chip based process window analysis
Author :
Kim, Sang-Wook ; Suh, Sung-Soo ; Kim, Young-Chang ; Lee, Suk-Joo ; Lee, Jung-Hyeon ; Kang, Chang-Jin ; Moon, Joo-Tae
Author_Institution :
Samsung Electron., Hwasung-City
Abstract :
In this paper, key process factors are computed during OPC for each fragment segments to perform a full-chip analysis of hot spot and removal of hot spot via process factor cost driven auto-correction or provide design guide for design for patterning (DFP) using a commercial OPC tool. Exposure latitude and dose sensitivity value represent image log slope (ILS) while DOF represents critical dimension variation at a defocused condition.
Keywords :
masks; photolithography; defocused condition; dose sensitivity value; full-chip based process window analysis; hot-spot detection; photolithographic process; Computational modeling; Costs; Error analysis; Error correction; Focusing; Image segmentation; Moon; Performance analysis; Postal services; Research and development;
Conference_Titel :
Microprocesses and Nanotechnology, 2007 Digest of papers
Conference_Location :
Kyoto
Print_ISBN :
978-4-9902472-4-9
DOI :
10.1109/IMNC.2007.4456102
