High temperature AlGaN/GaN HFET microwave characterization

Author

Tomaska, M.

Author_Institution

Inst. of Electron. & Photonics, Slovak Univ. of Technol., Bratislava, Slovakia

fYear

2012

fDate

11-15 Nov. 2012

Firstpage

27

Lastpage

30

Abstract

The paper reports high temperature on-wafer microwave characterization setup for AlGaN/GaN HEMT devices. DC output characteristics as well as microwave parameters f_T and f_max were measured and visualized in the form of 3-D diagrams in the temperature range from room temperature up to 425°C. Significant influence of temperature on DC and microwave properties was observed.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; wide band gap semiconductors; 3D diagrams; AlGaN-GaN; AlGaN-GaN HEMT devices; DC output characteristics; DC properties; high temperature AlGaN-GaN HFET microwave characterization; high temperature on-wafer microwave characterization setup; microwave parameters; microwave properties; temperature 20 degC to 425 degC; Aluminum gallium nitride; Gallium nitride; HEMTs; Microwave devices; Microwave measurements; Semiconductor device measurement; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices & Microsystems (ASDAM), 2012 Ninth International Conference on

Conference_Location

Smolenice

Print_ISBN

978-1-4673-1197-7

Type

conf

DOI

10.1109/ASDAM.2012.6418562

Filename

6418562