Title :
Fabrication of Nanopillars comprised of InGaN/GaN Multiple Quantum Wells by Focused Ion Beam Milling
Author :
Wu, Shang-En ; Hsueh, Tao-Hung ; Chuan-Pu Liu
Author_Institution :
Nat. Cheng Kung Univ., Tainan
Abstract :
Focused ion beam (FIB) direct milling of InGaN/GaN MQWs samples are performed with a beam-shape tuning process deliberately, and site-controlled high-aspect-ratio nano-pillars were anomalously produced, without any lithographies. The swelling of p-GaN tip induced by the ion beam live-irradiation served as low-milling-rate sites - the sites on which the resultant nanopillars form. The bump (or blister) formation mechanism is complicated but indeed plays an important role in heightening the nano-pillar. The retained quantum well (QW) discs inside the pillar emitted a sharp and discrete peak at 415 nm, showing a blue shift of 35 meV with respect to the bulk sample. The peak intensity was even enormously enhanced after subsequent wet-etching. Our results imply an alternative method for maskless and site-controlled nano-rod writing, and pave out a way for FIB prototyping III-nitride optical devices.
Keywords :
III-V semiconductors; MOCVD; electroluminescence; etching; gallium compounds; indium compounds; ion beam effects; nanostructured materials; semiconductor growth; semiconductor quantum wells; spectral line shift; swelling; wide band gap semiconductors; InGaN-GaN; beam-shape tuning process; blue shift; ion beam live-irradiation; low-milling-rate; metal-organic chemical-vapor deposition; multiple quantum wells; quantum well discs; site-controlled high-aspect-ratio nanopillars; swelling; wet-etching; Fabrication; Gallium nitride; Ion beams; Lithography; Milling; Nanoscale devices; Optical devices; Prototypes; Quantum well devices; Writing;
Conference_Titel :
Microprocesses and Nanotechnology, 2007 Digest of papers
Conference_Location :
Kyoto
Print_ISBN :
978-4-9902472-4-9
DOI :
10.1109/IMNC.2007.4456106