Title :
TCAD modelling of current dispersion in a 0.25 µm gate length GaN HEMT
Author :
Faramehr, S. ; Igic, P. ; Kalna, Karol
Author_Institution :
Electron. Syst. Design Centre, Swansea Univ., Swansea, UK
Abstract :
Current dispersion due to acceptor-type defects acting as electron traps are studied using 2D TCAD transient simulations. High and low drain pulse voltages are applied to study a dynamic picture of trapping and de-trapping of electrons using Drift Diffusion and Hydrodynamic transport models. In addition, Schottky electron tunnelling is employed to transient simulations in the presence of different densities of traps in the barrier to investigate how tunnelling affects the drain current at off-state.
Keywords :
III-V semiconductors; diffusion; disperse systems; electron traps; gallium compounds; high electron mobility transistors; technology CAD (electronics); tunnelling; wide band gap semiconductors; 2D TCAD transient simulation; GaN; HEMT; Schottky electron tunnelling; TCAD modelling; acceptor-type defects; current dispersion; drift diffusion models; dynamic picture; electron detrapping; high drain pulse voltages; hydrodynamic transport models; low drain pulse voltages; size 0.25 mum; Aluminum gallium nitride; Electron traps; Gallium nitride; HEMTs; Logic gates; Tunneling;
Conference_Titel :
Advanced Semiconductor Devices & Microsystems (ASDAM), 2012 Ninth International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4673-1197-7
DOI :
10.1109/ASDAM.2012.6418566
