DocumentCode :
3047920
Title :
The exploratory development of a high power S-band solid state radar transmitter
Author :
Hay, J. ; Kerstenbeck, E. ; Rahn, D. ; Halayko, D. ; Painchaud, G.
Author_Institution :
Canadian Marconi Co., Kanata, Ont., Canada
fYear :
1990
fDate :
7-10 May 1990
Firstpage :
135
Lastpage :
140
Abstract :
A solid-state power amplifier has been developed using 100 W S -band silicon bipolar transistors. The amplifier produces a nominal 400 W peak output power from 2.7 GHz to 3.0 GHz, at pulse widths up to 50 μs, at a 10% maximum duty cycle and 30% efficiency. A high-power planar hybrid combiner was also designed to combine 16 amplifiers to provide a nominal 5 kW RF output power. The isolation between combining ports ensures graceful degradation of output power should individual amplifier modules fail, and allows replacement of the modules during transmitter operation. Higher output powers can be achieved by adding more combining ports to the design or by incorporating a second stage of combining to sum the outputs from several 16-way combiners. The feasibility of solid-state radar transmitter technology at S-band is confirmed
Keywords :
bipolar transistors; microwave amplifiers; power amplifiers; radar transmitters; solid-state microwave circuits; 100 W; 2.7 to 3.0 GHz; 400 W; 5 kW; RF output power; S-band solid state radar transmitter; Si bipolar transistors; high power; planar hybrid combiner; power amplifier; Bipolar transistors; High power amplifiers; Power amplifiers; Power generation; Pulse amplifiers; Radiofrequency amplifiers; Silicon; Solid state circuits; Space vector pulse width modulation; Transmitters;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radar Conference, 1990., Record of the IEEE 1990 International
Conference_Location :
Arlington, VA
Type :
conf
DOI :
10.1109/RADAR.1990.201151
Filename :
201151
Link To Document :
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