Title :
Towards future III-nitride based THz OEICs in the UV range
Author :
Fox, A. ; Mikulics, M. ; Winden, A. ; Hardtdegen, H. ; Gregusova, D. ; Adam, R. ; Sobolewski, R. ; Marso, M. ; Grutzmacher, D. ; Kordos, P.
Author_Institution :
Peter Grunberg Inst. (PGI-9), Forschungszentrum Julich, Julich, Germany
Abstract :
A group III-nitride based MSM photodetector integrated with a MESFET in an OEIC circuit is presented exhibiting an exceptionally high 3 dB-bandwidth of 410 GHz. Advances towards circuit improvement by the future implementation of a gate recessed AlGaN/GaN HEMT device are reported. μ-PL is used directly on the processed device to optimize processing with respect to processing related strain and damage effects. It is demonstrated that μ-PL allows insight into device and material optimization which are the strategic key to improved future III-nitride based UV-optoelectronic integrated circuits (OEIC) operated up to the THz range.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; aluminium compounds; gallium compounds; high electron mobility transistors; integrated optoelectronics; photodetectors; submillimetre wave transistors; terahertz wave detectors; ultraviolet detectors; wide band gap semiconductors; μ-PL; AlGaN-GaN; HEMT device; III-nitride based THz OEIC circuit; MESFET; UV range; UV-optoelectronic integrated circuits; bandwidth 410 GHz; damage effects; group III-nitride based MSM photodetector; material optimization; visible-light-blind metal-semiconductor-metal photodetectors; Aluminum gallium nitride; Gallium nitride; HEMTs; Logic gates; MESFETs; Optoelectronic devices; Strain;
Conference_Titel :
Advanced Semiconductor Devices & Microsystems (ASDAM), 2012 Ninth International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4673-1197-7
DOI :
10.1109/ASDAM.2012.6418570
