DC characterization of InGaAs/InAlAs/InP based pseudomorphic HEMT (pHEMT)

Author

Ahmad, Mohiuddin ; Butt, H.T. ; Tauqeer, Tauseef ; Missous, Mohamed

Author_Institution

Sch. of Electr. Eng. & Comput. Sci. (SEECS), Nat. Univ. of Sci. & Technol., Islamabad, Pakistan

fYear

2012

fDate

11-15 Nov. 2012

Firstpage

187

Lastpage

190

Abstract

An epitaxial structure comprising depletion mode In_0.7Ga_0.3As/In_0.52Al_0.48As/InP pHEMT has been simulated using SILVACO. The main objective of our work was to incorporate a highly strained pseudomorphic In_0.7Ga_0.3As channel layer and study the effects of variations of supply layer thicknesses, delta doping and gate length. The important DC parameters such as pinch-off voltage, maximum drain current and transconductance are extracted from these simulations which suggest that our device architecture and material exhibits optimized performance. This research also focuses on inverse device modelling from experimental data and proposes calibration changes in epitaxial structure, geometry and doping of simulated pHEMT device in order to match simulated results with the measured results.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device models; semiconductor doping; semiconductor epitaxial layers; DC characterization; DC parameters; In_0.7Ga_0.3As-In_0.52Al_0.48As-InP; InGaAs-InAlAs-InP based pseudomorphic HEMT; SILVACO; delta doping; depletion mode pseudomorphic HEMT; device architecture; epitaxial structure; gate length; highly strained pseudomorphic channel layer; inverse device modelling; maximum drain current; optimized performance; pinch-off voltage; pseudomorphic HEMT device; supply layer thicknesses; transconductance; Doping; Indium gallium arsenide; Indium phosphide; Logic gates; PHEMTs; Semiconductor process modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices & Microsystems (ASDAM), 2012 Ninth International Conference on

Conference_Location

Smolenice

Print_ISBN

978-1-4673-1197-7

Type

conf

DOI

10.1109/ASDAM.2012.6418571

Filename

6418571