2/3-D circuit electro-thermal model of power MOSFET for SPICE-like simulation

Author

Chvala, Ales ; Donoval, Daniel ; Marek, Jiri ; Pribytny, Patrik ; Molnar, Miklos

Author_Institution

Inst. of Electron. & Photonics, Slovak Univ. of Technol. in Bratislava, Bratislava, Slovakia

fYear

2012

fDate

11-15 Nov. 2012

Firstpage

179

Lastpage

182

Abstract

New original SPICE-like simulation model for a power MOSFET based on interactive coupling of electrical and thermal properties is described. The thermal equivalent network for a multi-dimensional heat flow is presented. Designed electro-thermal MOSFET model for circuit SPICE-like simulations with distributed properties and 2-D thermal equivalent network is used for simulation of unclamped inductive switching (UIS) test of device robustness. The features and the limitations of the new model are analyzed and presented.

Keywords

SPICE; power MOSFET; semiconductor device models; 2D circuit electrothermal model; 2D thermal equivalent network; 3D circuit electrothermal model; SPICE-like simulation model; circuit SPICE-like simulations; distributed properties; electrical properties; electrothermal MOSFET model; interactive coupling; multidimensional heat flow; power MOSFET; thermal properties; unclamped inductive switching test simulation; Heating; Integrated circuit modeling; MOSFET circuits; Semiconductor device modeling; Thermal analysis; Thermal conductivity; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices & Microsystems (ASDAM), 2012 Ninth International Conference on

Conference_Location

Smolenice

Print_ISBN

978-1-4673-1197-7

Type

conf

DOI

10.1109/ASDAM.2012.6418573

Filename

6418573