Anisotropic resist reflow process simulation for 32 nm node elongated contact holes

Author

Park, Joon-Min ; Kim, Dai-Gyoung ; Hong, Joo-Yoo ; Oh, Hye-Keun

Author_Institution

Hanyang Univ., Ansan

fYear

2007

fDate

5-8 Nov. 2007

Firstpage

90

Lastpage

91

Abstract

In general, it is very hard to correctly predict the elongated contact hole resist reflow process ( CH RRP) due to position shift and pattern size irregularity of RRP, because simple RRP simulator uses isotropic resist flow. Therefore RRP simulator was upgraded which can correctly predict the elongated CH RRP by adding the bulk effect and anisotropic reflow. Optical proximity correction for 32 nm node was also applied to the elongated CH RRP to correctly predict the anisotropic elongated CH. The experimental and simulated CH patterns after RRP were compared and found that the simulator can correctly predict the behavior of complex CH array after RRP.

Keywords

nanopatterning; photoresists; proximity effect (lithography); semiconductor process modelling; CH RRP; anisotropic resist reflow process simulation; contact hole pattern size; elongated contact hole resist reflow process; optical proximity correction; size 32 nm; Anisotropic magnetoresistance; Geometrical optics; Moon; Optical arrays; Physics; Predictive models; Resists; Temperature; 32 nm pattern; elongated contact hole; optical proximity correction; resist reflow process;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology, 2007 Digest of papers

Conference_Location

Kyoto

Print_ISBN

978-4-9902472-4-9

Type

conf

DOI

10.1109/IMNC.2007.4456119

Filename

4456119