Title :
Properties of Al2O3 thin films grown by atomic layer deposition
Author :
Frohlich, K. ; Micusik, M. ; Dobrocka, Edmund ; Siffalovic, P. ; Gucmann, F. ; Fedor, J.
Author_Institution :
Inst. of Electr. Eng., Bratislava, Slovakia
Abstract :
Thin Al2O3 films were prepared by thermal and plasma enhanced atomic layer deposition at 100 and 200°C. Growth per cycle ranges from 0.108 to 0.139 nm/cycle. Composition of the films was investigated by XPS. Carbon impurity was higher for the films grown at 100°C. The films grown at 200°C were slightly oxygen deficient.The Al2O3 films grown at low temperatures have promising applications in microelectronics.
Keywords :
X-ray photoelectron spectra; aluminium compounds; atomic layer deposition; plasma materials processing; thin films; Al2O3; XPS; plasma enhanced atomic layer deposition; temperature 100 degC; temperature 200 degC; thermal deposition; thin films; Aluminum oxide; Ellipsometry; Films; Impurities; Plasma temperature; Temperature;
Conference_Titel :
Advanced Semiconductor Devices & Microsystems (ASDAM), 2012 Ninth International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4673-1197-7
DOI :
10.1109/ASDAM.2012.6418575
