• DocumentCode
    3048062
  • Title

    Properties of Al2O3 thin films grown by atomic layer deposition

  • Author

    Frohlich, K. ; Micusik, M. ; Dobrocka, Edmund ; Siffalovic, P. ; Gucmann, F. ; Fedor, J.

  • Author_Institution
    Inst. of Electr. Eng., Bratislava, Slovakia
  • fYear
    2012
  • fDate
    11-15 Nov. 2012
  • Firstpage
    171
  • Lastpage
    174
  • Abstract
    Thin Al2O3 films were prepared by thermal and plasma enhanced atomic layer deposition at 100 and 200°C. Growth per cycle ranges from 0.108 to 0.139 nm/cycle. Composition of the films was investigated by XPS. Carbon impurity was higher for the films grown at 100°C. The films grown at 200°C were slightly oxygen deficient.The Al2O3 films grown at low temperatures have promising applications in microelectronics.
  • Keywords
    X-ray photoelectron spectra; aluminium compounds; atomic layer deposition; plasma materials processing; thin films; Al2O3; XPS; plasma enhanced atomic layer deposition; temperature 100 degC; temperature 200 degC; thermal deposition; thin films; Aluminum oxide; Ellipsometry; Films; Impurities; Plasma temperature; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Devices & Microsystems (ASDAM), 2012 Ninth International Conference on
  • Conference_Location
    Smolenice
  • Print_ISBN
    978-1-4673-1197-7
  • Type

    conf

  • DOI
    10.1109/ASDAM.2012.6418575
  • Filename
    6418575
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3048062