2D irregular structure patterning and analysis of LED by NSOM

Author

Pudis, D. ; Kubicova, I. ; Skriniarova, J. ; Kovac, J. ; Jakabovic, J. ; Novak, Jiri ; Suslik, L. ; Hascik, S.

Author_Institution

Dept. of Phys., Univ. of Zilina, Zilina, Slovakia

fYear

2012

fDate

11-15 Nov. 2012

Firstpage

167

Lastpage

170

Abstract

This contribution presents possibilities of near-field scanning optical microscope (NSOM) in two different modes as an effective tool for semiconductor device surface patterning and for high-resolution microscopy. The illumination mode of the NSOM is used in lithography application to pattern two-dimensional irregular structure in the emitting surface of GaAs/AlGaAs-based light emitting diode (LED). The structure was patterned in the upper confinement AlGaAs layer and the enhancement of radiation from the patterned surface was proven by NSOM in collection mode.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; light emitting diodes; lithography; near-field scanning optical microscopy; 2D irregular structure patterning; GaAs-AlGaAs; GaAs-AlGaAs-based light emitting diode; collection mode; emitting surface; high-resolution microscopy; illumination mode; light emitting diode analysis; lithography application; near-field scanning optical microscope; patterned surface; radiation enhancement; semiconductor device surface patterning; upper confinement AlGaAs layer; Light emitting diodes; Optical diffraction; Optical fiber devices; Optical fibers; Stimulated emission; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices & Microsystems (ASDAM), 2012 Ninth International Conference on

Conference_Location

Smolenice

Print_ISBN

978-1-4673-1197-7

Type

conf

DOI

10.1109/ASDAM.2012.6418576

Filename

6418576