Optical and electrical characterization of photonic crystal light emitting diodes

Author

Hronec, Pavol ; Kovac, J. ; Skriniarova, J. ; Kovac, J. ; Suslik, L.

Author_Institution

Inst. of Electron. & Photonics, Slovak Univ. of Technol. in Bratislava, Bratislava, Slovakia

fYear

2012

fDate

11-15 Nov. 2012

Firstpage

155

Lastpage

158

Abstract

The paper deals with electrical and optical characterization of the Al_0.295Ga_0.705As/GaAs multi-quantum well light emitting diode (MQW LED) structure including two-dimensional photonic crystals (2D PhC) patterned in the LED surface. The active region of LED consists of three quantum wells with emitting maximum at 845 nm. The effect of photonic crystal with square symmetry and 500 nm grating period on electrical and optical properties of LED was investigated. The measurements of L-I characteristics show, that app. 3 times higher optical power from LED structure was achieved using photonic crystals in comparison with structure without PhC.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; light emitting diodes; photonic crystals; quantum well devices; Al_0.295Ga_0.705As-GaAs; L-I characteristics; LED surface; MQW LED structure; electrical properties; multiquantum well light emitting diode; optical properties; photonic crystal light emitting diodes; square symmetry; two-dimensional photonic crystals; Light emitting diodes; Optical fibers; Optical reflection; Optical surface waves; Photonic crystals; Semiconductor device measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices & Microsystems (ASDAM), 2012 Ninth International Conference on

Conference_Location

Smolenice

Print_ISBN

978-1-4673-1197-7

Type

conf

DOI

10.1109/ASDAM.2012.6418579

Filename

6418579