Detector of fast neutrons based on silicon carbide epitaxial layers

High quality liquid phase epitaxial layer of 4H-SiC with a thickness of 105 μm was used for fabrication of detector with the circular Schottky contact formed by using Au/Ni double layer contact metallization. The detector structure was characterized by current-voltage measurements showing low reverse current density at room temperature. Following the detection of fast neutrons was studied using the ²³⁹Pu-Be source with the mean neutron energy of about 4 MeV. Detected spectrum revealed silicon and carbon-recoil ion continuum. The simulation of detection efficiency vs. thickness of the detector active layer shows linear dependence.