Influence of active volume on detection efficiency of GaAs neutron detectors

Author

Sagatova, A. ; Zafko, B. ; Sedlackova, K. ; Dubecky, F. ; Bohacek, P. ; Necas, V.

Author_Institution

Fac. of Electr. Eng. & Inf. Technol., Slovak Univ. of Technol., Bratislava, Slovakia

fYear

2012

fDate

11-15 Nov. 2012

Firstpage

147

Lastpage

150

Abstract

The semi-insulating (SI) GaAs detectors prepared from bulk LEC (Liquid Encapsulated Czochralski) substrate polished down from both sides to 270 μm were tested as detectors of fast neutrons. The HDPE (High Density PolyEthylene) neutron converter layer was applied on the Schottky electrode using PP (PolyPropylene) glue. The influence of the detector active volume (modified via different reverse voltage applied) on the detection efficiency was studied using ²³⁹Pu-Be source of fast neutrons. The obtained experimental results were in agreement with the simulation predictions carried out using Monte Carlo radiation transport computer code MCNPX (Monte Carlo N-Particle eXtended).

Keywords

III-V semiconductors; electrodes; gallium arsenide; neutron detection; GaAs; GaAs neutron detectors; Monte Carlo radiation transport computer code MCNPX; Pu-Be source; Schottky electrode; bulk liquid encapsulated Czochralski substrate; detection efficiency; detector active volume; fast neutron detectors; high density polyethylene neutron converter layer; polypropylene glue; semi-insulating GaAs detectors; simulation predictions; Semiconductor devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices & Microsystems (ASDAM), 2012 Ninth International Conference on

Conference_Location

Smolenice

Print_ISBN

978-1-4673-1197-7

Type

conf

DOI

10.1109/ASDAM.2012.6418581

Filename

6418581