Influence of the MOVPE growth parameters on the properties of InGaAsN/GaAs MQW structures for solar cells application

Author

Radziewicz, D. ; Sciana, B. ; Pucicki, D. ; Serafinczuk, J. ; Tlaczala, M. ; Latkowska, M. ; Florovic, M. ; Kovac, J.

Author_Institution

Fac. of Microsyst. Electron. & Photonics, Wroclaw Univ. of Technol., Wroclaw, Poland

fYear

2012

fDate

11-15 Nov. 2012

Firstpage

123

Lastpage

126

Abstract

This work presents the epitaxial growth of undoped multiple quantum well (MQW) - 3 × In_yGa_1-yAs_1-xN_x/GaAs - structures obtained by atmospheric pressure metalorganic vapour phase epitaxy (APMOVPE). The relations between the hydrogen flow rate through the bubblers with TBHy, TMGa, TMIn and the composition of the resulting In_yGa_1-yAs_1-xN_x films were investigated. The influence of the growth temperature on the quantum well In_yGa_1-yAs_1-xN_x parameters were observed. Based upon this experiment, the technology parameters were estimated. These results were applied to the optimization of the hydrogen flow rate through the bubblers with TBHy, TMGa, TMIn and temperature for the growth of quantum well of In_yGa_1-yAs_1-xN_x.

Keywords

III-V semiconductors; MOCVD; gallium arsenide; indium compounds; quantum well devices; semiconductor quantum wells; solar cells; vapour phase epitaxial growth; InGaAsN-GaAs; MOVPE growth parameter; atmospheric pressure metalorganic vapour phase epitaxy; growth temperature; hydrogen flow rate; solar cells; undoped multiple quantum well; Gallium arsenide; Hydrogen; Indium; Nitrogen; Optical saturation; Photovoltaic cells; Quantum well devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices & Microsystems (ASDAM), 2012 Ninth International Conference on

Conference_Location

Smolenice

Print_ISBN

978-1-4673-1197-7

Type

conf

DOI

10.1109/ASDAM.2012.6418585

Filename

6418585