Si single-electron memory having in-plane dot with double gates

We fabricated the single-electron memory having double gates. In this device, sharp I_d drops were observed. The observed DeltaV_sg and DeltaV_bg are expressed by multiples of the quantized voltage shift, and they agreed well with the predicted values due to a single-electron injection into the dot. Therefore, we can conclude that electrons were injected into the dot from the channel one by one. While, we have obtained three times larger gm value by adding a back gate electrode, which resolve the tradeoff between transconductance and gate leakage current in the conventional memory with a single gate. These results will lead to an extremely low power memory.