Memory effects of nonvolatile polymer memory devices with an active layer consisting of poly(N-vinylcarbazole) and C60 nanocomposites

Promising applications of organic materials in next-generation electronic and optoelectronic devices have driven extensive efforts to form various composites. Electronic and optoelectronic devices fabricated utilizing organic materials, such as organic thin film transistors, organic light-emitting diodes, and organic solar cells, have been extensively studied. However, relatively little work has been done on organic memory devices fabricated utilizing hybrid composites. Among the various kinds of composites, hybrid composites based on fullerene C₆₀ and poly(N-vinylcarbazole) (PVK) organic materials have become particularly attractive because of their potential applications in organic electronic devices. Even though some works concerning the organic memory devices consisting of organic/metal/organic structures formed by using evaporation methods, very few studies concerning the memory effect of the organic/inorganic hybrid structures fabricated by using spin-coating techniques have been reported. This paper reports data for the memory effects of the effect of C₆₀ existence on the flat-band voltage shift of nonvolatile polymer memory devices with the PVK and the C₆₀ nanocomposites active layers was described.