DocumentCode :
3048556
Title :
Characterization of deposited materials formed by focused ion beam-induced chemical vapor deposition using an AuSi alloyed metal source
Author :
Yo, T. ; Tanaka, H. ; Koreyama, K. ; Nagata, T. ; Sakuma, Y. ; Nakajima, K. ; Chikyow, T. ; Yanagisawa, J. ; Sakai, A.
Author_Institution :
Osaka Univ., Osaka
fYear :
2007
fDate :
5-8 Nov. 2007
Firstpage :
150
Lastpage :
151
Abstract :
In this paper deposited materials using focused ion beam-induced chemical vapor deposition (FIB-CVD) in an AuSi alloyed metal source was investigated. Results using Au and Si FIB-CVD were almost the same as those using Ga FIB-CVD. It was suggested that differences in deposited materials among the ions used should be investigated in more detail.
Keywords :
chemical vapour deposition; focused ion beam technology; gold alloys; silicon alloys; sputtering; AuSi; alloyed metal source; deposited materials; focused ion beam-induced chemical vapor deposition; gallium FIB-CVD; Atomic force microscopy; Atomic layer deposition; Biological materials; Chemical vapor deposition; Gold; Inorganic materials; Raman scattering; Spectroscopy; Sputtering; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology, 2007 Digest of papers
Conference_Location :
Kyoto
Print_ISBN :
978-4-9902472-4-9
Type :
conf
DOI :
10.1109/IMNC.2007.4456148
Filename :
4456148
Link To Document :
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