DocumentCode
3048566
Title
Guided formation of sub-10 nm silicide dot array and their morphology change by electron beam irradiation
Author
Wi, J.-S. ; Kim, H.-M. ; Lee, H.-S. ; Nam, S.-W. ; Kim, K.-B.
Author_Institution
Seoul Nat. Univ., Seoul
fYear
2007
fDate
5-8 Nov. 2007
Firstpage
152
Lastpage
153
Abstract
We present a method for the formation of sub-10 nm scale silicide dots by applying e-beam energy. Our process demonstrates a hybrid approach which combines the "top down approach" -defining the area in which the dots are formed -and "bottom up approach" -which enables the formation of high density sub-10 nm scale dots below the resolution limit of e-beam patterning - in a single step process.
Keywords
arrays; electron beam effects; electron beam lithography; nanotechnology; quantum dots; JkSi; e-beam patterning; electron beam irradiation; morphology; sub-10 nm scale silicide dots; Electron beams; Etching; Lithography; Morphology; Palladium; Plasma applications; Resists; Scanning electron microscopy; Silicides; Size control;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology, 2007 Digest of papers
Conference_Location
Kyoto
Print_ISBN
978-4-9902472-4-9
Type
conf
DOI
10.1109/IMNC.2007.4456149
Filename
4456149
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